http://www.researchonline.mq.edu.au/vital/access/services/Feed ${session.getAttribute("locale")} 5 Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD http://www.researchonline.mq.edu.au/vital/access/manager/Repository/mq:1798 The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3–0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed. 2010-01-27T23:12:14.840Z ]]> The Nature of nitrogen related point defects in common forms of InN http://www.researchonline.mq.edu.au/vital/access/manager/Repository/mq:6266 The role of point defects related to the presence of excess nitrogen is elucidated for InN thin films grown by different techniques. Elastic recoil detection analysis has shown the presence of excess nitrogen in state-of-the-art InN films. Using x-ray photoelectron spectroscopy and x-ray diffraction it is shown that two distinct forms of point defects can be distinguished; one of these appears to be an interstitial form of nitrogen, common in some forms of polycrystalline InN. The other is associated with a combined biaxial and hydrostatic strain observed for molecular beam epitaxy(MBE) and chemical vapor deposition (CVD) crown films, and may be a mixture of the nitrogen-on-metal antisite defect and lower densities of indium vacancies and interstitial nitrogen. The high density of defects present in all the InN samples examined suggests that stoichiometry related point defects dominate the electrical and optical properties of the material. The difference in the type of point defect observed for polycrystalline (rf sputtered) and epitaxial (MBE and CVD) InN supports existing evidence that the Moss-Burstein effect is not an adequate description of the apparent band-gap difference between InN samples grown by different techniques. 2010-01-27T22:20:18.443Z ]]>