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Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/265460
Description: Two-channel noise measurements are useful for obtaining all four noise parameters of a transistor for circuit simulation and for locating the noise sources inside. It is also easier to stabilise the t ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267325
Description: A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/267486
Description: Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters that are measured on wafer and at room-temp ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/269712
Description: Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in GaAs device reliability studies, and sufficient for modeling the impact of temperature on device ter ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/265727
Description: Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/202658
Description: A new technique is proposed for the design of linear power amplifiers at millimeter-wave frequencies where load-pull of large transistor output cells is difficult. The technique transforms the load-pu ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/198379
Description: A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167699
Description: A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/118409
Description: Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analyticall ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26294
Description: A small-signal transistor model extraction technique is proposed. It partitions access and intrinsic elements with a more accurate network for the intrinsic section. This resolves problems of nonphysi ... More
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Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92255
Description: A new large-signal HEMT drain current model is presented that accurately describes not only the AC gain and resistance of the device, but also their derivatives with respect to bias. This allows the a ... More
Reviewed: Reviewed