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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/148646
Description: Dielectric susceptibilities of the following semiconductors for electromagnetic field of zero frequency are investigated: InN, GaN, AlN, InxGa1-xN, InxAl1-xN, InN containing oxygen, and non-stoichiome ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15200
Description: The influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps of common binary ... More
Reviewed: Reviewed
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