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Date: 2012
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/202658
Description: A new technique is proposed for the design of linear power amplifiers at millimeter-wave frequencies where load-pull of large transistor output cells is difficult. The technique transforms the load-pu ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167699
Description: A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167646
Description: A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168672
Description: A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linea ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/17637
Description: A novel measurement of the dynamics of high electron-mobility transistor (HEMT) and MESFET behavior permits classification of rate-dependence mechanisms and identification of operating regions that th ... More
Full Text: Full Text
Reviewed: Reviewed
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