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Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/361389
Description: The temperature-dependent thermal conductivities of a GaAs pseudomorphic high-electron mobility transistor's (pHEMT) substrate and epilayer regions are extracted to develop a 3-D finite-element-method ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/269712
Description: Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in GaAs device reliability studies, and sufficient for modeling the impact of temperature on device ter ... More
Reviewed: Reviewed
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