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Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1209044
Description: An accurate scalable 3-D thermal finite-element-method (FEM) model is developed and verified for a GaAs pHEMT process using gate resistance thermometry (GRT) as the basis. The measurement technique is ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195646
Description: The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate metal. Demonstrations of T-GRT are presented ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/202658
Description: A new technique is proposed for the design of linear power amplifiers at millimeter-wave frequencies where load-pull of large transistor output cells is difficult. The technique transforms the load-pu ... More
Reviewed: Reviewed
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