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Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15220
Description: The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical ab ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15210
Description: Elastic recoil detection with swift heavy ion projectiles enables the direct and calibration-independent quantification of the N/In ratio and the impurity content of indium nitride thin films. The bea ... More
Reviewed: Reviewed
Date: 2003
Subject Keyword: 091200 Materials Engineering
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244589
Description: 4 page(s)
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/31883
Description: Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride e ... More
Reviewed: Reviewed
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