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Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/265460
Description: Two-channel noise measurements are useful for obtaining all four noise parameters of a transistor for circuit simulation and for locating the noise sources inside. It is also easier to stabilise the t ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/267486
Description: Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters that are measured on wafer and at room-temp ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/265727
Description: Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular ... More
Reviewed: Reviewed
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