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Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1209044
Description: An accurate scalable 3-D thermal finite-element-method (FEM) model is developed and verified for a GaAs pHEMT process using gate resistance thermometry (GRT) as the basis. The measurement technique is ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195646
Description: The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate metal. Demonstrations of T-GRT are presented ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285857
Description: A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionizatio ... More
Reviewed: Reviewed
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