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Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/45376
Description: The element-specific electronic structure of the organic semiconductor aluminum tris-8-hydroxyquinoline (Alq₃) has been studied using a combination of resonant x-ray emission spectroscopy, x-ray photo ... More
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Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27013
Description: InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased ... More
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Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26697
Description: Growth of microcrystalline GaN films by microwave plasma assisted laser-induced chemical vapour deposition has been studied in the temperature range of 525°C - 650°C for growth on sapphire and silicon ... More
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