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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207708
Description: We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207727
Description: In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelec ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206756
Description: We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg = 100 nm ... More
Reviewed: Reviewed
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