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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1219614
Description: In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | MOSFET | SPICE | threshold voltage
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211156
Description: In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel ... More
Reviewed: Reviewed
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