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Authors: Ahmad, Viqar
Date: 2016
Language: eng
Resource Type: Thesis MRes
Identifier: http://hdl.handle.net/1959.14/1090089
Description: Empirical thesis.
Date: 2015
Language: eng
Resource Type: Thesis PhD
Identifier: http://hdl.handle.net/1959.14/1146236
Description: Includes bibliographical references.
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/331966
Description: A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flo ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/112640
Description: A remote plasma chemical vapour deposition (RPCVD) system for the growth of gallium nitride (GaN) thin films is investigated using optical emission spectroscopy (OES). The intensities of the various e ... More
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1141639
Description: We demonstrate a correlation between the microstructure of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homoepitaxial GaN films. We show that the diffusion l ... More
Reviewed: Reviewed
Date: 2001
Subject Keyword: Doping distribution | GaN | HVPE | Strain
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1153126
Description: Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxati ... More
Reviewed: Reviewed
Date: 2001
Subject Keyword: Diffraction | EXAFS | GaN | Photoluminescence | Pressure
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/218136
Description: Several previously reported methods have been investigated for the production of bulk, high quality, gallium nitride powder. Two principal attempts are reported, using solid state metathesis reactions ... More
Reviewed: Reviewed
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