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Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1145444
Description: An interferometric method has been used to measure the piezoelectric coefficient d33 in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low te ... More
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1245466
Description: 5 page(s)
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27038
Description: The Low Temperature Nitride Growth Facility has been formed with the goal of developing novel growth and analysis techniques that may be suitable for the growth of group III nitride materials at tempe ... More
Reviewed: Reviewed
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