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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1219614
Description: In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | MOSFET | SPICE | threshold voltage
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211156
Description: In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207471
Description: We present a physics-based model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacit ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207209
Description: In this work, we have modeled the impact of substrate depletion in fully-depleted silicon-on-insulator (FDSOI) transistor and have extensively verified the model for both NMOS and PMOS with geometrica ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207486
Description: In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have impr ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208318
Description: We present an accurate and robust surface-potential-based compact model for simulation of circuits designed with GaN-based high-electron mobility transistors (GaN HEMTs). An accurate analytical surfac ... More
Reviewed: Reviewed
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