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Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1070004
Description: Mid-infrared GaAs₁₋xSbx/InP core/shell nanowires are grown coherently with perfectly twin-free zinc blende crystal structure. An unusual triangular InP shell with predominantly {112}A facets instead o ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1052243
Description: We experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers. The spatially resolved and angle-resolved far-field emission profiles of single InP nanowire lasers ly ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1070126
Description: We have demonstrated phase sensitive detectors of coherent terahertz radiation that use single nanowires as active elements. The single GaAs/AlGaAs nanowires acted as sensitive photoconductive element ... More
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1051586
Description: Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetectio ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1051946
Description: Spectroscopy and imaging in the terahertz (THz) region of the electromagnetic spectrum has proven to provide important insights in fields as diverse as chemical analysis, materials characterization, s ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1070595
Description: Photoconductive terahertz detectors based on single GaAs/AlGaAs nanowire were designed, fabricated and incorporated into the pulsed time-domain technique, showing a promise for nanowires in terahertz ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1071266
Description: We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and in ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1033169
Description: We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally det ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1188972
Description: Axially resolved microphotoluminescence mapping of semiconductor nanowires held in an optical tweezers reveals important new experimental information regarding equilibrium trapping points and trapping ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1222377
Description: We present a novel method for spatial mapping of the luminescent properties of single optically trapped semiconductor nanowires by combing dynamic optical tweezers with micro-photoluminescence. The te ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1188537
Description: We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexci ... More
Reviewed: Reviewed
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