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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1074760
Description: An on-chip resonator is designed and fabricated using a standard 0.13-μm SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1196203
Description: A compact balanced frequency doubler with more than 35 dB odd-harmonic rejection and fractional bandwidth of 73% is presented in this letter. Wide bandwidth and high odd-harmonic suppression is achiev ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195486
Description: An ultra-compact integrated resonator and bandpass filters (BPF), in silicon-based technology, are presented for millimetre-wave applications. The resonator consists of two broadside-coupled lines in ... More
Reviewed: Reviewed
Date: 2016
Subject Keyword: balun | transformer | sige | frequency doubler
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1202631
Description: A compact transformer balun with less than 0.13 dB magnitude imbalance and 0.4° phase imbalance from 7 to 15 GHz is presented. The balun is suitable for use with frequency doublers using a balanced ci ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1045375
Description: A transformer-coupled frequency quadrupler with 50% bandwidth is designed in a 0.25μm SiGe process. The quadrupler covers an output frequency range from 36GHz to 60 GHz with a total power consumption ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/265460
Description: Two-channel noise measurements are useful for obtaining all four noise parameters of a transistor for circuit simulation and for locating the noise sources inside. It is also easier to stabilise the t ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/267486
Description: Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters that are measured on wafer and at room-temp ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/275895
Description: Carbon nanotube (CNT) yarns are novel CNT-based materials that extend the advantages of CNT from the nanoscale to macroscale applications. In this study, we have modeled CNT yarns as potential data tr ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/265727
Description: Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167702
Description: Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the da ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168666
Description: GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequen ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168663
Description: Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be modeled by the addition of a thermal impe ... More
Reviewed: Reviewed
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