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Date: 2009
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/118435
Description: Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on ... More
Reviewed: Reviewed
Date: 2009
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/119165
Description: A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power DC measurements can be used to ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/71727
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244656
Description: High speed frequency dividers are critical parts of frequency synthesisers in wireless systems. These dividers allow the output frequency from a voltage controlled oscillator to be compared with a muc ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1229358
Description: We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244278
Description: 11 page(s)
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92248
Description: Small-signal microwave transistor characteristics are used to construct and fit a comprehensive model of their dynamic behaviour. The model includes thermal effects and trap-related effects, which inf ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/107304
Description: A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodula ... More
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1229860
Description: Self heating gives microwave FETs a temperature response to power dissipation. This is shown to be significant at high-frequency signal rates, even though the apparent time constant of heating is a fe ... More
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1165721
Description: 8 page(s)
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/92718
Description: 28 page(s)
Date: 2001
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/92717
Description: 30 page(s)
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