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Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195472
Description: This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the perfo ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/358527
Description: This paper reports on the development of high frequency, high efficiency integrated supply modulators for airborne and space based high power amplifier modules. The power switches within the integrate ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/326772
Description: GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/303408
Description: Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/307675
Description: This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was de ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/269872
Description: Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated switching power converters. Pulsed IV characterization of GaN FETs revealed ON resistance dependence ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267380
Description: Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables high ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/284550
Description: RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state qui ... More
Reviewed: Reviewed
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