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Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1207035
Description: Modern microwave circuit performance is susceptible to dispersion of the characteristics of microwave FETs. This is because the complex signals used in communication systems invoke charge trapping and ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/199552
Description: The integrated design flow that links simulation, layout, and electromagnetic (EM) analysis is the foundation for modern RF/microwave integrated circuit (IC) design. The inclusion of thermal simulatio ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167646
Description: A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1227957
Description: 4 page(s)
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1211056
Date: 2010
Subject Keyword: transistor noise
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1208539
Description: We have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model [4]. This m ... More
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1169443
Description: 10 page(s)
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1169457
Description: 7 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244069
Description: For integrated circuit design up to 50GHz and beyond accurate models of the transistor access structures and intrinsic structures are necessary for prediction of circuit performance. The circuit desig ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244529
Description: This paper investigates up/down conversion asymmetry in intermodulation distortion observed in measurements of resistive FET mixers. Symmetric behaviour is intuitively expected of such a topology, so ... More
Reviewed: Reviewed
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