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Date: 2016
Subject Keyword: millimetre-wave | HEMT | FET modelling | ETSI
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1207162
Description: 150 GHz amplifiers fabricated on a commercial GaAs process with an fT of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a band ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1213345
Description: The frequency range 25-45 GHz contains point-to-point bands at 28, 32, 38 and 42 GHz, potential implementation of 5G at 28 and 39 GHz and various military applications. Traditionally, short gate lengt ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1196203
Description: A compact balanced frequency doubler with more than 35 dB odd-harmonic rejection and fractional bandwidth of 73% is presented in this letter. Wide bandwidth and high odd-harmonic suppression is achiev ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1234210
Description: This paper presents a theoretical analysis for location estimation of a wireless capsule endoscope (WCE) in the small-intestine region. Under three different shadowing scenarios by assuming standard d ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1209044
Description: An accurate scalable 3-D thermal finite-element-method (FEM) model is developed and verified for a GaAs pHEMT process using gate resistance thermometry (GRT) as the basis. The measurement technique is ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195408
Description: Novel and realistic application of hot-via interconnects to millimeter-wave active and power MMICs is demonstrated for the first time. Power amplifier MMICs in the 80- and 100-GHz range were successfu ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195646
Description: The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate metal. Demonstrations of T-GRT are presented ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/361389
Description: The temperature-dependent thermal conductivities of a GaAs pseudomorphic high-electron mobility transistor's (pHEMT) substrate and epilayer regions are extracted to develop a 3-D finite-element-method ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/336848
Description: This paper presents the results of the measurements of a GaAs Chua's circuit used for a new manufacturing process monitor. The proposed monitoring method is suggested to replace or complement the PCM ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/319182
Description: The thermal impact of device bias-state and structures (such as source connected field plates, gate-pitch, back-vias, and number of gate fingers) in AlGaN/GaN-on-Si high electron mobility transistors ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/314454
Description: This paper provides the measurement results of the Chua’s circuit manufactured using an InGaAs pHEMT process. The designed circuit was capable of producing both, harmonic and chaotic oscillations. The ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285857
Description: A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionizatio ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/275895
Description: Carbon nanotube (CNT) yarns are novel CNT-based materials that extend the advantages of CNT from the nanoscale to macroscale applications. In this study, we have modeled CNT yarns as potential data tr ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/269712
Description: Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in GaAs device reliability studies, and sufficient for modeling the impact of temperature on device ter ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/198379
Description: A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. ... More
Reviewed: Reviewed