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Date: 2017
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207300
Description: A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel-Kramers-Brillouin under spa ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206756
Description: We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg = 100 nm ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207197
Description: In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential base ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206785
Description: In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207471
Description: We present a physics-based model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacit ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: book
Identifier: http://hdl.handle.net/1959.14/1249343
Description: This book is the first to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as ... More
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207009
Description: In this letter, we model future generation SiGe FinFETs using the industry standard compact model BSIM-CMG. BSIM-CMG is enhanced to model these aggressively scaled devices. It is found that in these n ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206766
Description: We enhance the capability of industry standard compact model BSIM6 to model the parasitic current Iedge at the shallow trench isolation edge. Accurate, efficient, and scalable model for Iedge is devel ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207209
Description: In this work, we have modeled the impact of substrate depletion in fully-depleted silicon-on-insulator (FDSOI) transistor and have extensively verified the model for both NMOS and PMOS with geometrica ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: analog | BSIM4 | BSIM6 | compact model | RF
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207494
Description: BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4 ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: germanium | FinFETs | BSIM-CMG | compact models
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206975
Description: In this letter, we present modeling results for germanium p-type FinFETs using the industry standard Berkeley Spice Common Multi-gate Field Effect Transistor (BSIM-CMG) model. The effect of perpendicu ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207486
Description: In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have impr ... More
Reviewed: Reviewed
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