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Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/322012
Description: Polarized neutron reflectometry and x-ray reflectometry were used to determine the nanoscale magnetic and chemical depth profiles of the heavy rare-earth nitrides HoN, ErN, and DyN in the form of 15-t ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/322020
Description: We report C(1s) and O(1s) surface sensitive x-ray photoelectron spectroscopy (XPS) and C and O K-edge partial-electron yield near-edge x-ray absorption fine structure (NEXAFS) measurements for (100) a ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/178644
Description: The electronic structure of thin film HoN has been studied using soft x-ray spectroscopy. The combination of soft x-ray emission, x-ray absorption, and photoemission techniques yields direct evidence ... More
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Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/130859
Description: The nature of the apparent band-gap shift in polycrystalline indium nitride thin-films, grown by remote-plasma-enhanced chemical vapour deposition at 535 ± 10 °C, has been investigated separately in r ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/109637
Description: The electronic structure of GdN films grown by pulsed laser deposition has been investigated by soft x-ray absorption (XAS) and x-ray emission spectroscopy (XES) at the N K-edge. Density functional ca ... More
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Date: 2010
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/119916
Description: We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption ... More
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Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/44452
Description: Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. %. The results indicate that at higher Mn contents, the Ferm ... More
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Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/41912
Description: We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resist ... More
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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/24634
Description: The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show t ... More
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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/41922
Description: Multiple Zhang-Rice type spectral features have been observed in resonant inelastic X-ray scattering (RIXS) from the quasi–one-dimensional cuprate charge transfer insulator Li₂CuO₂. The first feature ... More
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Reviewed: Reviewed
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