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Date: 2017
Subject Keyword: compact model | halo | transconductance
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1210928
Description: In this paper, we report anomalous behavior of transconductance(gm) in halo implanted MOSFET for linear and saturation regions across both gate and body biases. The gm characteristics undergo sharp ch ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | halo doping | flicker noise | compact model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211315
Description: An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to sig ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206766
Description: We enhance the capability of industry standard compact model BSIM6 to model the parasitic current Iedge at the shallow trench isolation edge. Accurate, efficient, and scalable model for Iedge is devel ... More
Reviewed: Reviewed
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