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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208216
Description: In this paper, a surface-potential-based compact model is proposed for the capacitance of an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, i.e., with gate and sou ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207233
Description: In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of ba ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208250
Description: In this paper, we have proposed a new analytical model for FETs working in the quasi-ballistic regime. The model is based on a calculation of the charge density along the channel which is then used to ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: HEMT | noise model | thermal noise
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1219639
Description: In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface po ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208297
Description: In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model. Thermionic emission and Poole-Frenkel emission are t ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: HEMT | flicker noise | noise model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211656
Description: In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier numbe ... More
Reviewed: Reviewed
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