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Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244557
Description: 10 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/21973
Description: In this work, a hydrogenated film deposited on physically small carbon cylinder electrodes was used to minimise electrode fouling that is commonly encountered during electrochemical detection of the n ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1228279
Description: Progress in the design of field effect transistor on heterostructure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunn ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15220
Description: The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical ab ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15210
Description: Elastic recoil detection with swift heavy ion projectiles enables the direct and calibration-independent quantification of the N/In ratio and the impurity content of indium nitride thin films. The bea ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15200
Description: The influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps of common binary ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1155267
Description: 37 page(s)
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/30173
Description: We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical a ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1225866
Description: 1 page(s)
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1168275
Description: 4 page(s)
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1113004
Description: 1 page(s)
Date: 2004
Subject Keyword: 010500 Mathematical Physics
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1082180
Description: 4 page(s)
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/43277
Description: We present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride film ... More
Reviewed: Reviewed
Date: 2003
Subject Keyword: 091200 Materials Engineering
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244589
Description: 4 page(s)
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27033
Description: Only very few compositional surface and bulk studies of InN have been performed. It is known that there is a strong oxide presence on the surface of InN. We used a high sensitivity, high resolution X- ... More
Reviewed: Reviewed