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Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30718
Description: Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and s ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27178
Description: Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emissi ... More
Reviewed: Reviewed
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