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| Title | Author/Creator | Date | Full Text | Reviewed | |
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| Donor-acceptor pair emission enhancement in mass-transport-grown GaN | Paskova, T; Arnaudov, B; Paskov, P. P; Goldys, E. M; Hautakangas, S... More | 2005 | — | 
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| Atomic layer epitaxy of ZnO for substrates for GaN epitaxy | Godlewski, M; Szcerbakow, A; Kopalko, K; Lusakowski, E; Butcher, K. S. A... More | 2003 |
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| Optical and electrical properties of InN grown by radio-frequency sputtering | Wintrebert-Fouquet, M; Butcher, K. S. A; Motlan, | 2003 |
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| Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition | Afifuddin, A; Butcher, K. S. A; Chen, Patrick P.-T; Goldys, E. M; Tansley, T. L | 2002 |
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Author/Creator
- Butcher, K. S. A (3)
- Goldys, E. M (3)
- Tansley, T. L (2)
- Afifuddin, A (1)
- Arnaudov, B (1)
- Barski, A (1)
- Chen, Patrick P.-T (1)
- Godlewski, M (1)
- Hautakangas, S (1)
- Kopalko, K (1)
Subject Keyword
Resource Type
- conference paper (3)
- journal article (1)
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