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Title	Author/Creator	Date	Full Text
Common-gate load-pull with Q-band application	Mahon, Simon J; Young, Alan C; Parker, Anthony E	2012	—
Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition	Drozdowicz-Tomsia, K; Goldys, E. M; Fu, Lan; Jagadish, C	2006	—
Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures	Drozdowicz-Tomsia, Krystyna; Goldys, Ewa M; Motlan, Motlan; Zareie, Hadi; Phillips, Matthew R	2005	—
Atomic layer epitaxy of ZnO for substrates for GaN epitaxy	Godlewski, M; Szcerbakow, A; Kopalko, K; Lusakowski, E; Butcher, K. S. A... More	2003
Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions	Wintrebert-Fouquet, M	2003
High-sensitivity x-ray photoelectron spectroscopy characterization of a quantum device structure	Wintrebert-Fouquet, M; Butcher, K	2002	—
Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD	Motlan,; Goldys, E. M; Butcher, K. S. A; Tansley, T. L	2002
Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride	Muensit, Supasarote	1999

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