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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1219614
Description: In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207471
Description: We present a physics-based model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacit ... More
Reviewed: Reviewed
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