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Authors: Clement, Ryan
Date: 2016
Language: eng
Resource Type: Thesis MRes
Identifier: http://hdl.handle.net/1959.14/1147522
Description: Empirical thesis.
Full Text: Full Text
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/107304
Description: A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodula ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/18760
Description: The temperature response of field-effect transistors to instantaneous power dissipation has been shown to be significant at high frequencies, even though the self-heating process has a very low time c ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/17627
Description: The intermodulation performance of an FET in the common-source configuration is dependent on the impedance presented to its gate and drain terminals, not only at fundamental, but also at harmonic and ... More
Full Text: Full Text
Reviewed: Reviewed
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