Macquarie University, Sydney Macquarie University ResearchOnline

Showing items 1 - 7 of 7.

Add to Quick Collection   All 7 Results

  • First
  • Previous
  • 1
  • Next
  • Last
Sort:
 Add All Items to Quick Collection
Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/161714
Description: Dimethyltelluride has been used as a dopant source for GaSb epilayers grown via atmospheric pressure metalorganic chemical vapour deposition (MOCVD). It has been observed that the electron concentrati ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47442
Description: Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/14911
Description: AlₓGa₁−ₓSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47425
Description: Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the co ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29437
Description: A mutilayer structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown for the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski–Krastanow (S–K) growth mode. Ev ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27110
Description: The extent of oxidation and growth derived oxygen contamination for Al₀.₀₅Ga₀.₉₅Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spec ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2001
Subject Keyword: AlGaSb | GaAs substrates | MOCVD
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1153230
Description: AlxGa1-xSb films in the regime 0x0.25 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa, and TMSb precursors. We report growth conditions and film ... More
Reviewed: Reviewed
  • First
  • Previous
  • 1
  • Next
  • Last