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Date: 2016
Subject Keyword: millimetre-wave | HEMT | FET modelling | ETSI
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1207162
Description: 150 GHz amplifiers fabricated on a commercial GaAs process with an fT of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a band ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: HEMT | noise model | thermal noise
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1219639
Description: In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface po ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: HEMT | flicker noise | noise model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211656
Description: In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier numbe ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: Thesis PhD
Identifier: http://hdl.handle.net/1959.14/265190
Description: "Dissertation submitted in fulfilment of the requirements for the degree of Doctor of Philosophy"
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Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168672
Description: A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linea ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/119542
Description: The influence of the non-ideal response of the pulse-amplifier on the trap and self-heating dynamics, and hence, on the drain-current transient in a GaN HEMT is studied with new trap and self-heating ... More
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Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/119195
Description: The aim of this work is to develop a scalable small signal HEMT model. We propose a general intrinsic model unit cell to build larger transistor devices according to our need and model the metal accor ... More
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Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26294
Description: A small-signal transistor model extraction technique is proposed. It partitions access and intrinsic elements with a more accurate network for the intrinsic section. This resolves problems of nonphysi ... More
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Reviewed: Reviewed
Authors: Qu, G | Parker, A. E
Date: 2000
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/92749
Description: The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, ... More
Reviewed: Reviewed
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