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Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47442
Description: Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15215
Description: We examine the Moss-Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the M ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47439
Description: A dominating donor-acceptor pair (DAP) emission at about 3.27 eV is observed in the photoluminescence and cathodoluminescence spectra of intentionally undoped mass-transport (MT)-grown GaN, while only ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47425
Description: Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the co ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27100
Description: ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27024
Description: An InP/ln₀.₅₃Ga₀.₄₇As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An In₀.₅₃Ga₀.₄₇As ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27033
Description: Only very few compositional surface and bulk studies of InN have been performed. It is known that there is a strong oxide presence on the surface of InN. We used a high sensitivity, high resolution X- ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27013
Description: InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27110
Description: The extent of oxidation and growth derived oxygen contamination for Al₀.₀₅Ga₀.₉₅Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spec ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26687
Description: Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky diodes were fabricated using Al barriers a ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26719
Description: Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layer. The high compliance of the ZnO has allowed r ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26697
Description: Growth of microcrystalline GaN films by microwave plasma assisted laser-induced chemical vapour deposition has been studied in the temperature range of 525°C - 650°C for growth on sapphire and silicon ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/40861
Description: A high-resolution, high-sensitivity VG x-ray photoelectron spectrometer was used to study a semiconductor layer structure grown for the fabrication of resonant tunneling bipolar transistor devices. De ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26708
Description: We report results for optical spectroscopy of GaSb self assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room te ... More
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