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Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/40469
Description: UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal streng ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/16153
Description: The grain size for polycrystalline GaN, grown in low-temperature gallium-rich conditions, is shown to be correlated to the oxygen content of the films. Films with lower oxygen content were observed to ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26687
Description: Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky diodes were fabricated using Al barriers a ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/82014
Description: This erratum is for an article that appeared in Journal of applied physics, Vol. 90, Issue 12, pg. 6011-6016, and may be found at http://dx.doi.org/10.1063/1.1415363.
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47417
Description: Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8–3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffr ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26719
Description: Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layer. The high compliance of the ZnO has allowed r ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26697
Description: Growth of microcrystalline GaN films by microwave plasma assisted laser-induced chemical vapour deposition has been studied in the temperature range of 525°C - 650°C for growth on sapphire and silicon ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/27002
Description: Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47440
Description: The temperature dependence of the hole mobilities of AlₓGa₁₋ₓSb films in the regime 0≤x≤0.25 has been examined by Van der Pauw-Hall measurements. The films have been grown by metalorganic chemical vap ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47419
Description: The effect of low-energy electron beam irradiation (LEEBI) on residual hydrogen impurities and native defects in activated metalorganic vapor phase epitaxy-grown Mg-doped (p-type) GaN layers was studi ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/30459
Description: 80 page(s)
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/17318
Description: An efficient combined numerical–analytical technique is developed for calculating states of the continuum spectrum in systems with quantum wells (QWs) with an arbitrary potential shape, described by a ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/26681
Description: We report on optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of In target with pure nitrogen gas. The resistivity of the films is in the range of 10⁻³–10⁻² ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26708
Description: We report results for optical spectroscopy of GaSb self assembled quantum dots (QDs) grown by metalorganic chemical vapour deposition (MOCVD) on GaAs substrates. We examined the QD emission by room te ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47443
Description: We report results of photoluminescence (PL) of GaSb self-assembled quantum dots grown by metalorganic chemical vapor deposition on GaAs substrates. We examined the emission from dots with average heig ... More
Reviewed: Reviewed