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Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/44452
Description: Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. %. The results indicate that at higher Mn contents, the Ferm ... More
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Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/45376
Description: The element-specific electronic structure of the organic semiconductor aluminum tris-8-hydroxyquinoline (Alq₃) has been studied using a combination of resonant x-ray emission spectroscopy, x-ray photo ... More
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Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/46520
Description: Pattern forming processes are abundant in nature. Here, we report on a particular pattern forming process. Upon withdrawal of fluid from a particle-fluid dispersion in a Hele-Shaw cell, the particles ... More
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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/23344
Description: The O K-LL spectrum from a SiO₂ surface was measured in coincidence with O 1s photoemission in SiO₂. The coincidence lineshapes are compared to the simultaneously obtained conventional Auger lineshape ... More
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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/41912
Description: We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resist ... More
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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/24634
Description: The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show t ... More
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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/23444
Description: The adsorption of ferric and ferrous iron onto the native oxide of the SiO₂/Si(111) surface has been evaluated using X-ray photoelectron spectroscopy (XPS). Through a series of immersion experiments, ... More
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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/22954
Description: Gallium nitride and indium nitride films have been grown by remote plasma enhanced chemical vapor deposition (RPECVD) at temperatures between 570 and 650 °C for GaN and between 350 and 570 °C for InN ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/41922
Description: Multiple Zhang-Rice type spectral features have been observed in resonant inelastic X-ray scattering (RIXS) from the quasi–one-dimensional cuprate charge transfer insulator Li₂CuO₂. The first feature ... More
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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/44649
Description: The role of point defects related to the presence of excess nitrogen is elucidated for InN thin films grown by different techniques. Elastic recoil detection analysis has shown the presence of excess ... More
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Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29867
Description: The necessary elements for practical devices exploiting quantum coherence in diamond materials are summarized, and progress towards their realization documented. A brief review of future prospects for ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47442
Description: Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15205
Description: New metric system called electron metric system having basic metric constant is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry re ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47441
Description: We report the observation of efficient fluorescence upconversion in Sm-doped Gd₂O₃ nanopowders prepared by the spray pyrolysis method. The blue upconversion emission was observed with low-power contin ... More
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Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/14911
Description: AlₓGa₁−ₓSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth ... More
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