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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/24634
Description: The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show t ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/20404
Description: We have observed an “above band-gap” Urbach like characteristic for gallium nitride films (at the high energy side of the band-edge). A combination of X-ray diffraction, secondary ion mass spectroscop ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/84008
Description: 9 page(s)
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/44587
Description: Elastic recoil detection analysis, using an incident beam of 200 MeV Au ions, has been used to measure indium nitride films grown by radio-frequency sputtering. It is shown that the films have nitroge ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27100
Description: ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29412
Description: Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum d ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29437
Description: A mutilayer structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown for the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski–Krastanow (S–K) growth mode. Ev ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27038
Description: The Low Temperature Nitride Growth Facility has been formed with the goal of developing novel growth and analysis techniques that may be suitable for the growth of group III nitride materials at tempe ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/40469
Description: UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal streng ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/17552
Description: The band-gap of indium nitride has long been believed to be about 1.9eV with slight variations due to band-tailing in polycrystalline samples and degenerate doping. Recently, other values as low as 0. ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/16153
Description: The grain size for polycrystalline GaN, grown in low-temperature gallium-rich conditions, is shown to be correlated to the oxygen content of the films. Films with lower oxygen content were observed to ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26687
Description: Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky diodes were fabricated using Al barriers a ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26719
Description: Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layer. The high compliance of the ZnO has allowed r ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26697
Description: Growth of microcrystalline GaN films by microwave plasma assisted laser-induced chemical vapour deposition has been studied in the temperature range of 525°C - 650°C for growth on sapphire and silicon ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/27002
Description: Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs) on GaAs substrates was optimized with respect to their geometry. The results show that the size and density of ... More
Reviewed: Reviewed