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Date: 2012
Subject Keyword:
090600 Electrical and Electronic Engineering
| Q-band
| Computer simulation
| microwave devices
| millimeter wave integrated circuits
| millimeter wave measurements
| MMICs
| modeling
| nonlinear distortion
| semiconductor device modeling
| simulation
| electromagnetic analysis
| gallium arsenide
| HEMTs
| integrated circuit modeling
| linear amplifiers
| linearity
| load-pull
| microwave amplifiers
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/202658
Description:
A new technique is proposed for the design of linear power amplifiers at millimeter-wave frequencies where load-pull of large transistor output cells is difficult. The technique transforms the load-pu
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Authors:
Tarazi, Jabra
| Mahon, Simon J
| Fattorini, Anthony P
| Heimlich, Michael C
| Parker, Anthony E
Date: 2011
Subject Keyword:
090600 Electrical and Electronic Engineering
| FET scaling
| HEMTs
| Noise parameters
| semiconductor device modeling
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167699
Description:
A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter
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Date: 2011
Subject Keyword:
090600 Electrical and Electronic Engineering
| Distributed parameter circuits
| electromagnetic analysis
| HEMTs
| parameter extraction
| semiconductor device modeling
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167646
Description:
A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of
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