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Date: 2001
Subject Keyword: Diffraction | EXAFS | GaN | Photoluminescence | Pressure
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/218136
Description: Several previously reported methods have been investigated for the production of bulk, high quality, gallium nitride powder. Two principal attempts are reported, using solid state metathesis reactions ... More
Reviewed: Reviewed
Date: 2000
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/218245
Description: A new facility for simultaneous extended X-ray absorption of fine structure (EXAFS), X-ray diffraction and photoluminescence measurements under high pressures has been developed for use on station 9.3 ... More
Reviewed: Reviewed
Date: 1996
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/218787
Description: The pressure-induced transitions in bulk amorphous GaSb and Ge-GaSb solid solutions, prepared by a solid state amorphization of the high-pressure phases after decompression, were studied under pressur ... More
Reviewed: Reviewed
Date: 1996
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/218662
Description: 4 page(s)
Reviewed: Reviewed
Date: 1996
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/218659
Description: In-situ high pressure (up to 20 GPa) energy-dispersive EXAFS as well as energy-and angle-dispersive powder diffraction have been used to study phase transformations in bulk amorphous GaSb and (GaSb)1- ... More
Reviewed: Reviewed
Date: 1996
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/218671
Description: The structural transformations during the pressure induced semiconductor to metal transition [1,2] in the bulk amorphous (GaSb)₁₋ₓ(Ge₂)ₓ in a wide range of concentration x (x= 0-0.8) have been studied ... More
Reviewed: Reviewed
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