Macquarie University, Sydney Macquarie University ResearchOnline

Showing items 1 - 15 of 15.

Add to Quick Collection   All 15 Results

  • First
  • Previous
  • 1
  • Next
  • Last
Sort:
 Add All Items to Quick Collection
Authors: Parker, Anthony
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244351
Description: Field Effect Transistors exhibit a variety of complicated dynamic and nonlinear interactions that affect millimetre-wave devices used for telecommunications. The dynamics include self heating, bias de ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1229358
Description: We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244278
Description: 11 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244069
Description: For integrated circuit design up to 50GHz and beyond accurate models of the transistor access structures and intrinsic structures are necessary for prediction of circuit performance. The circuit desig ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244529
Description: This paper investigates up/down conversion asymmetry in intermodulation distortion observed in measurements of resistive FET mixers. Symmetric behaviour is intuitively expected of such a topology, so ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244235
Description: This work investigates the nature of the nonlinearities in an anti-parallel combination of Schottky diodes, which is often used as a frequency converting device or a mixer. An anti-parallel Schottky d ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244634
Description: The evolution of wide-bandgap semiconductor transistor technology is placed in historical context with other active device technologies. The relative rapidity of GaN transistor development is noted an ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26294
Description: A small-signal transistor model extraction technique is proposed. It partitions access and intrinsic elements with a more accurate network for the intrinsic section. This resolves problems of nonphysi ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92248
Description: Small-signal microwave transistor characteristics are used to construct and fit a comprehensive model of their dynamic behaviour. The model includes thermal effects and trap-related effects, which inf ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/107304
Description: A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodula ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92350
Description: Anti-parallel diode pair mixers offer the benefit of intermodulation nulling without conversion nulls. However, the practicality of intermodulation nulling in improving mixer distortion performance is ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92251
Description: Traps at the surface of devices cause delayed response of drain current to a step change of gate voltage. This is known as gate lag. Gate lag is usually caused by surface hole trapping. Traps at the s ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92245
Description: A measurement system that enables next generation broadband communications systems is described. The measurements are fully calibrated and are traceable to the national standards laboratories. The sys ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/102640
Description: In this paper we describe a laser micromachining process for prototyping dual-band artificial magnetic conductors (AMCs) with narrow slots in the order of (~mil2mμ50) or even narrower. Because these n ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92255
Description: A new large-signal HEMT drain current model is presented that accurately describes not only the AC gain and resistance of the device, but also their derivatives with respect to bias. This allows the a ... More
Reviewed: Reviewed
  • First
  • Previous
  • 1
  • Next
  • Last