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Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/147837
Description: Different placement strategies for Field-Effect-Transistor (FET) active switching devices in an electromagnetic band gap (EBG) periodic structure are investigated. Two possible placements for the swit ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/136043
Description: A planar, metamaterial-based, one-dimensional periodic structure that can be switched between multiple states is numerically investigated. It can be fabricated at low cost in gallium-arsenide (GaAs) t ... More
Reviewed: Reviewed
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