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Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/265460
Description: Two-channel noise measurements are useful for obtaining all four noise parameters of a transistor for circuit simulation and for locating the noise sources inside. It is also easier to stabilise the t ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267325
Description: A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285857
Description: A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionizatio ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/265727
Description: Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/198379
Description: A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167699
Description: A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167702
Description: Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the da ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168666
Description: GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequen ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167646
Description: A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168663
Description: Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be modeled by the addition of a thermal impe ... More
Reviewed: Reviewed
Date: 2009
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/118435
Description: Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on ... More
Reviewed: Reviewed
Date: 2009
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/119165
Description: A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power DC measurements can be used to ... More
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Reviewed: Reviewed
Date: 2009
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/118072
Description: Diode mismatch in an anti-parallel diode mixer results in an unwanted virtual leakage at twice the local oscillator pumping frequency. Random variability in a fabrication process is one of the sources ... More
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Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26294
Description: A small-signal transistor model extraction technique is proposed. It partitions access and intrinsic elements with a more accurate network for the intrinsic section. This resolves problems of nonphysi ... More
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Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92248
Description: Small-signal microwave transistor characteristics are used to construct and fit a comprehensive model of their dynamic behaviour. The model includes thermal effects and trap-related effects, which inf ... More
Reviewed: Reviewed