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Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285857
Description: A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionizatio ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285933
Description: A pulsed I-V thermal resistance Rth measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/202658
Description: A new technique is proposed for the design of linear power amplifiers at millimeter-wave frequencies where load-pull of large transistor output cells is difficult. The technique transforms the load-pu ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167699
Description: A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167646
Description: A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of ... More
Reviewed: Reviewed
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