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Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/269872
Description: Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated switching power converters. Pulsed IV characterization of GaN FETs revealed ON resistance dependence ... More
Reviewed: Reviewed
Authors: Parker, Anthony
Date: 2013
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/283412
Description: 28 page(s)
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267380
Description: Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables high ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285933
Description: A pulsed I-V thermal resistance Rth measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/284550
Description: RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state qui ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1227957
Description: 4 page(s)
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1228119
Description: 4 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26304
Description: A combination low noise amplifier (LNA) and diversity switch (diversity LNA) is presented, allowing the switching between two spatially separated antennas to improve the received SNR in a multipath en ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26314
Description: Simulated results for a silicon germanium transmitter operating at 60 GHz are presented. The super-heterodyne transmitter is based on a moving IF architecture with two up-conversion stages. The transm ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244656
Description: High speed frequency dividers are critical parts of frequency synthesisers in wireless systems. These dividers allow the output frequency from a voltage controlled oscillator to be compared with a muc ... More
Reviewed: Reviewed
Authors: Parker, Anthony
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244351
Description: Field Effect Transistors exhibit a variety of complicated dynamic and nonlinear interactions that affect millimetre-wave devices used for telecommunications. The dynamics include self heating, bias de ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1229358
Description: We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244278
Description: 11 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244069
Description: For integrated circuit design up to 50GHz and beyond accurate models of the transistor access structures and intrinsic structures are necessary for prediction of circuit performance. The circuit desig ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244529
Description: This paper investigates up/down conversion asymmetry in intermodulation distortion observed in measurements of resistive FET mixers. Symmetric behaviour is intuitively expected of such a topology, so ... More
Reviewed: Reviewed