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Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1229358
Description: We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244278
Description: 11 page(s)
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92248
Description: Small-signal microwave transistor characteristics are used to construct and fit a comprehensive model of their dynamic behaviour. The model includes thermal effects and trap-related effects, which inf ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/107304
Description: A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodula ... More
Reviewed: Reviewed
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