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Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27100
Description: ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29412
Description: Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum d ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29437
Description: A mutilayer structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown for the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski–Krastanow (S–K) growth mode. Ev ... More
Reviewed: Reviewed
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