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Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195472
Description: This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the perfo ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/358527
Description: This paper reports on the development of high frequency, high efficiency integrated supply modulators for airborne and space based high power amplifier modules. The power switches within the integrate ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/326772
Description: GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/303408
Description: Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/307675
Description: This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was de ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267380
Description: Gallium Nitride (GaN) HEMTs have increasingly been used in high frequency switching power converters. The combination of high voltage, high current, high temperature and low-on resistance enables high ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/284550
Description: RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state qui ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/102724
Description: This article presents the winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power-added efficiency (PAE) greater than 85%. It will be ... More
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1173584
Description: 6 page(s)
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26304
Description: A combination low noise amplifier (LNA) and diversity switch (diversity LNA) is presented, allowing the switching between two spatially separated antennas to improve the received SNR in a multipath en ... More
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Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26314
Description: Simulated results for a silicon germanium transmitter operating at 60 GHz are presented. The super-heterodyne transmitter is based on a moving IF architecture with two up-conversion stages. The transm ... More
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Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244656
Description: High speed frequency dividers are critical parts of frequency synthesisers in wireless systems. These dividers allow the output frequency from a voltage controlled oscillator to be compared with a muc ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1143552
Description: This brief presents a robust, power efficient CMOS frequency divider for the 5-GHz UNII band. The divider operates as a voltage controlled ring oscillator with the output frequency modulated by the sw ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244669
Description: 6 page(s)
Reviewed: Reviewed
Date: 2006
Subject Keyword: mm-wave | 60GHz | SiGe | OFDM
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/48536
Description: ISM spectrum at 60GHz has attracted attention for possible high-speed applications in wireless communications for well over ten years. However, no high volume applications have emerged. Despite progre ... More
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