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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/44649
Description: The role of point defects related to the presence of excess nitrogen is elucidated for InN thin films grown by different techniques. Elastic recoil detection analysis has shown the presence of excess ... More
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Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1098271
Description: 4 page(s)
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1129449
Description: 6 page(s)
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/44587
Description: Elastic recoil detection analysis, using an incident beam of 200 MeV Au ions, has been used to measure indium nitride films grown by radio-frequency sputtering. It is shown that the films have nitroge ... More
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Reviewed: Reviewed
Date: 2003
Subject Keyword: 091200 Materials Engineering
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244589
Description: 4 page(s)
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/17552
Description: The band-gap of indium nitride has long been believed to be about 1.9eV with slight variations due to band-tailing in polycrystalline samples and degenerate doping. Recently, other values as low as 0. ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/16153
Description: The grain size for polycrystalline GaN, grown in low-temperature gallium-rich conditions, is shown to be correlated to the oxygen content of the films. Films with lower oxygen content were observed to ... More
Reviewed: Reviewed
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