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Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1044649
Description: A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/331955
Description: The contributions of gate-connected and source-connected field plates to extracted device capacitances (gate-source, gate-drain and drain-source capacitance) are assessed during the development of an ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/331966
Description: A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flo ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267325
Description: A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/198379
Description: A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/180346
Description: GaAs pHEMT thermal reliability test structures are introduced which incorporate on-wafer heating using Thin Film Resistors (TFR) and a DC gate metal temperature measurement method. Results from 3D Fin ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167699
Description: A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167646
Description: A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/118409
Description: Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analyticall ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1227957
Description: 4 page(s)
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1211056
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