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Date: 2010
Subject Keyword: transistor noise
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1208539
Description: We have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model [4]. This m ... More
Date: 2006
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1229464
Description: The use of GaAs high electron mobility transistors (HEMTs) in monolithic microwave integrated circuits (MMICs) presents significant challenges to modelling intermodulation distortion performance. It i ... More
Authors: Parker, Anthony
Date: 2006
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1229481
Description: Some aspects of microwave transistor behavior are emerging as significant factors in applications involving increasing signal bandwidths, increasing carrier frequencies, and modulation schemes requiri ... More
Date: 2006
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1229768
Description: 1 page(s)
Date: 2002
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/1214808
Description: 1 page(s)
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